# Readings

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## Textbooks

### Required

del Alamo, Jesús A. *Integrated Microelectronic Devices: Physics and Modeling.* (In preparation.) To be distributed in lecture.

### Reference Texts

Muller, Richard S., Theodore I. Kamins, and Mansun Chan. *Device Electronics for Integrated Circuits*. 3rd ed. New York, NY: John Wiley & Sons, 2002. ISBN: 9780471593980.

Pierret, Robert F. *Semiconductor Device Fundamentals*. Reading, MA: Addison Wesley, 1996. ISBN: 9780201543933.

Streetman, Ben G. *Solid State Electronics Devices*. 4th ed. Upper Saddle River, NJ: Prentice Hall, 1995. ISBN: 9780131587670.

### Other Useful Books

McKelvey, John P. *Solid State and Semiconductor Physics*. Melbourne, FL: Krieger Pub Co, 1982. ISBN: 9780898743968.

Tsividis, Yannis P. *Operation and Modeling of the MOS Transistor*. 2nd ed. New York, NY: McGraw-Hill, 1987. ISBN: 9780070653818.

## Readings by Session

The course readings are taken from the required textbook by Prof. Jesús del Alamo.

SES # | TOPICS | READINGS |
---|---|---|

L1 | 6.720 overview; fundamental concepts | Chapter 1 |

L2 | Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) | Chapter 2, sections 2.1-2.4 (2.4.1) |

L3 | Carrier statistics in semiconductors; Fermi level | Chapter 2, sections 2.4-2.6 |

L4 | Generation and recombination mechanisms; equilibrium rates | Chapter 3, sections 3.1-3.4 |

L5 | Generation and recombination rates outside equilibrium | Chapter 3, sections 3.4-3.7 |

L6 | Carrier dynamics; thermal motion | Chapter 4, sections 4.1-4.3 |

L7 | Drift; diffusion; transit time | Chapter 4, section 4.5 |

L8 | Non-uniform doping distribution | Chapter 4, section 4.6; Chapter 5, sections 5.1 and 5.2 |

L9 | Quasi-Fermi levels; continuity equations | Chapter 5, sections 5.3-5.5 |

L10 | Shockley equations; majority-carrier type situations | Chapter 5, section 5.6 |

L11 | Minority-carrier type situations: statics | Chapter 5, section 5.4 |

L12 | Minority-carrier dynamics; space-charge and high-resistivity (SCR) transport; carrier multiplication | Chapter 5, section 5.7 |

L13 | PN junction: electrostatics in and out of equilibrium | Chapter 7, sections 7.1 and 7.2 (7.2.1, 7.2.2) |

L14 | PN junction: depletion capacitance; current-voltage (I-V) characteristics | Chapter 7, section 7.2 (7.2.3) |

L15 | PN junction: carrier storage; diffusion capacitance; PN diode: parasitics | Chapter 6, sections 6.2 (6.2.4) and 6.3 |

L16 | PN junction dynamics; PN diode: non-ideal and second-order effects | Chapter 6, section 6.4 |

L17 | Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics | Chapter 7, sections 7.1 and 7.2 |

L18 | Metal semiconductor junction I-V characteristics | Chapter 7, section 7.2.3 |

L19 | Schottky diode; equivalent-circuit model; ohmic contacts | Chapter 7, sections 7.3-7.5 |

L20 | Ideal semiconductor surface | Chapter 8, sections 8.1-8.2 (8.2.1-8.2.2) |

L21 | Metal-oxide-semiconductor (MOS) in equilibrium | Chapter 8, sections 8.2 (8.2.3, 8.2.4) and 8.3 (8.3.1) |

L22 | MOS outside equilibrium; Poisson-Boltzmann formulation | Chapter 8, section 8.3 (8.3.2-8.3.4) |

L23 | Simplifications to Poisson-Boltzmann formulation | Chapter 8, sections 8.3 (8.3.5) and 8.4 (8.4.1, 8.4.2) |

L24 | Dynamics of MOS structure: C-V characteristics; three-terminal MOS | Chapter 8, sections 8.5-8.6; Chapter 9, section 9.1 |

L25 | Inversion layer transport | Chapter 9, sections 9.2-9.4 (9.4.1, 9.4.2) |

L26 | Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics | Chapter 9, sections 9.4 (9.4.3-9.4.5) and 9.5 |

L27 | I-V characteristics (cont.): body effect, back bias | Chapter 9, sections 9.5 (9.5.2) and 9.6 |

L28 | I-V characteristics (cont.): channel-length modulation, sub threshold regime | Chapter 9, section 9.7 |

L29 | C-V characteristics; small-signal equivalent circuit models | Chapter 9, sections 9.7.3 and 9.7.4 |

L30 | Short-channel MOSFET: short-channel effects | Ko, P. K. "Approaches to Scaling." |

L31 | MOSFET short-channel effects (cont.) | Ko, P. K. "Approaches to Scaling." |

L32 | MOSFET scaling | Ko, P. K. "Approaches to Scaling." |

L33 | Evolution of MOSFET design | |

L34 | Bipolar junction transistor (BJT) intro; basic operation | Chapter 11, sections 11.1 and 11.2 (11.2.1) |

L35 | BJT I-V characteristics in forward-active | Chapter 11, section 11.2 (11.2.1) |

L36 | Other regimes of operation of BJT | Chapter 11, sections 11.2 (11.2.5), 11.3, and 11.4 (11.4.1) |

L37 | BJT C-V characteristics; small-signal equivalent circuit models | Chapter 11, section 11.4.2 |

L38 | BJT high-frequency characteristics | Chapter 11, section 11.5 (11.5.1, 11.5.3, 11.5.4, 11.5.5 but only qualitatively) |

L39 | BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) |