6.720J / 3.43J Integrated Microelectronic Devices

Spring 2007

Schematic diagram of a modern bipolar junction transistor (BJT): cross section shown.
Schematic diagram of a modern bipolar junction transistor (BJT): cross section shown. (Image by Jesús del Alamo.)

Course Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.

Acknowledgements

Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Recommended Citation

For any use or distribution of these materials, please cite as follows:

Jesús del Alamo and Harry Tuller, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].


*Some translations represent previous versions of courses.

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Staff

Instructors:
Prof. Jesús Del Alamo
 

Course Meeting Times

Lectures:
Three sessions / week
1 hour / session

Recitations:
One session / week
1 hour / session

Level

Graduate

*Translations

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